Design of Wideband Power Amplifier in 130nm CMOS for LTE Applications
نویسندگان
چکیده
منابع مشابه
Design of RF CMOS Power Amplifier for UWB Applications
Ever since the FCC allocated 7.5 GHz (from 3.1 GHz to 10.6 GHz) for ultra wideband (UWB) technology, interest has been renewed in both academic and industrial circles to exploit this vast spectrum for short range, high data rate wireless applications. The great potential of UWB lies in the fact that it can co-exist with the already licensed spectrum users and can still pave the way for a wide r...
متن کاملA 28-36 GHz Optimized CMOS Distributed Doherty Power Amplifier with A New Wideband Power Divider Structure
Background and Objectives: In this paper, a new design strategy was proposed in order to enhance bandwidth and efficiency of power amplifier. Methods: To realize the introduced design strategy, a power amplifier was designed using TSMC CMOS 0.18um technology for operating in the Ka band, i.e. the frequency range of 26.5-40GHz. To design the power amplifier, first a power divider (PD) with a ver...
متن کاملLayout Design of Switching-Mode Amplifier for LTE Applications
The layout design of hysteresis controlled switching-mode amplifier for fourth generation Long-Term Evolution (4G LTE) applications is presented in this paper. Those circuits are used in envelope amplifiers (EAs) architectures, which supply voltage to the transmitter’s power amplifier (PA). The proper layout design can help to improve the overall efficiency of EA, because most of the energy del...
متن کاملA Low-Voltage, Low-Power, Two-Stage Amplifier for Switched-Capacitor Applications in 90 nm CMOS Process
Abstract- A novel low-voltage two-stage operational amplifier employing resistive biasing is presented. This amplifier implements neutralization and correction common mode stability in second stage while employs capacitive dc level shifter and coupling between two stages. The structure reduces the power consumption and increases output voltage swing. The compensation is performed by simple mill...
متن کامل0.7–2.7 GHz wideband CMOS low-noise amplifier for LTE application
ELECT A wideband low-noise amplifier (LNA) for long-term evolution applications is presented. A capacitive cross-coupled common-gate in combination with current-bleeding common-source topologies is adopted for wideband input matching, high gain and low noise figure (NF). Inter-cascade inductors are adopted to cancel the inter-stage parasitics, which extend input matching and operational bandwid...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: International Journal of Engineering and Technology
سال: 2017
ISSN: 2319-8613,0975-4024
DOI: 10.21817/ijet/2017/v9i6/170906036